دیتاشیت PSMN005-25D,118
مشخصات دیتاشیت
نام دیتاشیت |
PSMN005-25D
|
حجم فایل |
152.686
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
12
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
25V
-
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
-
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 25A, 10V
-
Vgs(th) (Max) @ Id:
2V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 5V
-
Vgs (Max):
±15V
-
Input Capacitance (Ciss) (Max) @ Vds:
3500pF @ 20V
-
FET Feature:
-
-
Power Dissipation (Max):
125W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
DPAK
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
PSMN0
-
detail:
N-Channel 25V 75A (Tc) 125W (Tc) Surface Mount DPAK